SINGLE-MATERIAL MEMS USING POLYCRYSTALLINE DIAMOND

被引：0

作者：

Cao, Zongliang ^{[1
]}

Varney, Mike ^{[1
]}

Aslam, Dean ^{[1
]}

机构：

[1] Michigan State Univ, Micro & Nano Technol Lab, E Lansing, MI 48824 USA

来源：

MEMS 2010: 23RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2010年

关键词：

TECHNOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The multi-material MEMS fabrication process often requires a larger number of masks making it more expensive as compared to single-material MEMS (SMM) technology. By varying the doping level in poly-C, semi-conducting, metallic and insulating (undoped) properties are achieved that are needed for poly-C SMM. However, the development of diamond-based SMM technology faces a number of challenges including (a) producing highly-insulating and highly-conducting poly-C films, (b) creating ohmic contacts and (c) patterning by dry etching of poly-C films grown on Si or SiO(2). These challenges are addressed in this paper.

引用

页码：51 / 54

页数：4

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