Optically-Activated Gate Control of Power Semiconductor Device Switching Dynamics

Modulation of the switching dynamics of a power semiconductor device (PSD) using an optically-triggered power transistor (OTPT), which controls the gate excitation of the PSD, is outlined and experimentally demonstrated. The core concept is the integration of width- and intensity-modulation for the optical triggering beam. Key issues related to the OTPT design, optical interfacing, and hybrid integration with the PSD die are discussed. Scalability of this concept is demonstrated across a range of PSD types (power MOSFET, IGBT, and vertical JFET) and material platforms (Si and SiC).