Bi2S3 doping of single crystals of Bi2Te3-based solid solutions

被引：0
|
作者：
Svechnikova, TE
Maksimova, NM
Konstantinov, PP
机构：
[1] Russian Acad Sci, Baikov Inst Met, Moscow 117334, Russia
[2] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
INORGANIC MATERIALS | 1998年 / 34卷 / 03期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
n-Bi(?)2Te(3-y-z)Se(y)S(z) single crystals (y = 0, z = 0.06; y = 0, z = 0.09; y = 0.09, z = 0.06; y = 0.09, z = 0.09) were grown by the Czochralski technique. The effective segregation coefficients K-eff of S in Bi2Te3-Bi2S3 and Bi2Te3-Bi2Se3-Bi2S3 solid solutions were determined. As compared to Bi2Te2.85Se0.15, the multicomponent solid solutions exhibit lower lattice thermal conductivity and higher thermoelectric efficiency. The flexural strength of single crystals increases by a factor of 1.3 upon doping with Bi2S3.
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页码：233 / 235
页数：3
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