Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM

被引：5
|
作者：
Alayan, Mouhamad [1 ,2 ]
Vianello, Elisa [1 ,3 ,4 ]
de Salvo, Barbara [4 ,5 ]
Perniola, Luca [6 ,7 ,8 ]
Padovani, Andrea [9 ,10 ]
Larcher, Luca [9 ]
机构：
[1] CEA, LETI, Adv Memory Technol Lab, Grenoble, France
[2] Joseph Fourier Univ, Grenoble, France
[3] Univ Udine, Udine, Italy
[4] Polytech Inst Grenoble, Grenoble, France
[5] IBM Corp, Albany, NY USA
[6] LETI, Adv Memory Technol Lab, Grenoble, France
[7] Univ Pisa, Pisa, Italy
[8] Inst Natl Polytech Grenoble, Grenoble, France
[9] Univ Modena, Modena, Italy
[10] Univ Ferrara, Ferrara, Italy
来源：
IEEE DESIGN & TEST | 2017年 / 34卷 / 03期
关键词：
DIELECTRIC-BREAKDOWN; HFO2;
D O I：
10.1109/MDAT.2017.2682246
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Editor's note: Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors investigate the forming voltage and the data retention of aluminum (Al)-doped HfO2-based RRAM devices and suggest a way to improve the device's data retention time. - - Yiran Chen, Duke University © 2013 IEEE.
引用
收藏
页码：23 / 30
页数：8
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