A modeling study on utilizing In2S3 as a buffer layer in CIGS-based solar cells

被引：5

作者：

Beyrami, N. ^{[1
]}

Saadat, M. ^{[1
]}

Sohbatzadeh, Z. ^{[1
]}

机构：

[1] Univ Sistan & Baluchestan, Dept Phys, Zahedan, Iran

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2022年 / 21卷 / 06期

关键词：

CIGS solar cells; Buffer layer; Thin film; In2S3; INDIUM SULFIDE BUFFER; NA THIN-FILMS; BAND-GAP; PERFORMANCE; EFFICIENCY; ZNS; OPTIMIZATION; DEPOSITION; DEVICE; BETA-IN2S3;

D O I：

10.1007/s10825-022-01927-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In Cu(In1-x,Ga-x)Se (CIGS)-based solar cells, the cadmium sulfide (CdS) layer is conventionally used as a buffer layer. In the current study, the CdS layer was replaced by the indium sulfide (In2S3) layer, and the impact of various concentrations of Ga in the CIGS absorber, the band gap of the In2S3 buffer layer, and the band gap of the NayCu1-yIn5S8 interfacial layer on the efficiency of these CIGS solar cells were investigated. The results indicated that in the absence of NayCu1-yIn5S8, the optimal performance was obtained with an E-g-In2S3 value of 3.1 eV and the ratio of Ga/(Ga +In) (GGI) =1, yielding an efficiency of 21.97%. The formation of the NayCu1-yIn5S8 interfacial layer deteriorated the efficiency of the device, and the highest efficiency of the CIGS solar cells with the interfacial layer was 16.33%.

引用

页码：1329 / 1337

页数：9

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