Recently, it has been pointed out that temperature change under irradiation strongly affects the microstructural evolution of materials. From an engineering point of view, it is very important to investigate the effects of temperature change under irradiation up to high damage levels. Ion irradiations were conducted in the High Fluence Irradiation Facility (HIT) up to 25 dpa. Both upward and downward temperature changes were performed with temperature combinations of 350/500 and 500/350 degreesC. Under irradiation with an upward temperature change, the microstructure in vanadium after the temperature change has been found to approach the microstructure of material irradiated at constant temperature with increasing damage level. On the other hand, significant effects of temperature change appeared in V-4Cr-4Ti-0.1Si at high damage level. Under irradiation with a downward temperature change, coarsening of defects was observed just after the downward temperature change. The microstructure approached the microstructure of the material irradiated at constant temperature with increasing damage level. (C) 2002 Elsevier Science B.V. All rights reserved.
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Karlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, GermanyKarlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
Zimber, N.
Vladimirov, P.
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Karlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, GermanyKarlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
Vladimirov, P.
Klimenkov, M.
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Karlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, GermanyKarlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
Klimenkov, M.
Jaentsch, U.
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Karlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, GermanyKarlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
Jaentsch, U.
Vila, R.
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CIEMAT, Natl Fus Lab Fus Mat, Madrid 28040, SpainKarlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
Vila, R.
Chakin, V.
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Karlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, GermanyKarlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
Chakin, V.
Mota, F.
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CIEMAT, Natl Fus Lab Fus Mat, Madrid 28040, SpainKarlsruhe Inst Technol KIT, Inst Appl Mat Appl Mat Phys IAM AWP, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Gao, Jie
Huang, Hefei
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Huang, Hefei
Liu, Jizhao
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Liu, Jizhao
Liu, Renduo
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Liu, Renduo
Lei, Qiantao
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Lei, Qiantao
Li, Yan
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