Short-period InAs/GaSb superlattices for mid-infrared photodetectors

被引：10
|
作者：
Haugan, H. J. [1 ]
Szmulowicz, F. [1 ]
Brown, G. J. [1 ]
Ullrich, B. [2 ]
Munshi, S. R. [1 ]
Wickett, J. C. [3 ]
Stokes, D. W. [3 ]
机构：
[1] USAF, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[2] Bowling Green State Univ, Dept Phys & Astron, Wright Patterson AFB, OH 45433 USA
[3] Univ Houston, Dept Phys, Houston, TX 77204 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674250
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a newly developed envelope function approximation model that includes interface effects, several InAs/GaSb type-II superlattices (SLs) were designed for uncooled mid-infrared detector applications. The 4 micron cutoff could be achieved with several SL designs. Superlattices with shorter periods have larger intervalence band separations than larger-ones, which could increase the optical signal and reduce the detector noise, thus making room temperature operation possible. To test these possibilities, several short-period SLs were grown by molecular-beam epitaxy and their optical properties with reducing SL period were studied by band-edge absorption, photoconductivity and photoluminescence measurements. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1702 / +
页数：3
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