Modelling and characterization of commercial CMOS IC's under radiation

被引：0
|
作者：
Shanware, A [1 ]
Godambe, N [1 ]
Vasi, J [1 ]
Chandorkar, A [1 ]
Das, A [1 ]
机构：
[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,BOMBAY 400076,MAHARASHTRA,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：72 / 74
页数：3
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