A Ka-Band GaN-on-Si MMIC Analog Vectorial Modulator and Its Broadband Calibration Procedure

被引:2
|
作者
Collodi, G. [1 ]
Passafiume, M. [1 ]
Bilotta, T. [1 ]
Cidronali, A. [1 ]
机构
[1] Univ Florence, Dept Informat Engn, I-50139 Florence, Italy
关键词
Front-end; gallium nitride on silicon (GaN-on-Si); millimeter-wave (mm-w); multifunction monolithic microwave-integrated circuit (MMIC); vectorial modulator (VM);
D O I
10.1109/LMWC.2021.3054463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter introduces for the first time a fully integrated analog vectorial modulator (VM) in gallium nitride on silicon (GaN-on-Si) monolithic microwave-integrated circuit (MMIC) technology, operating in Ka-band, and an analytical calibration technique suitable for VM. An extensive characterization of the prototype, with both static and dynamic modulating signals, validates both the design and the calibration technique. The VM is capable to produce corrected constellations with accuracy of 0.06 dB and 0.28 degrees root mean square, respectively, for amplitude and phase, across the 35-40 GHz bandwidth. Furthermore, it is capable to generate single-side modulated signal with undesired sideband suppression in excess of 47 dBc.
引用
收藏
页码:377 / 380
页数:4
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