Lo-phonon sideband photoluminescence in pure GaAs

被引：6
|
作者：
Kozhevnikov, M [1 ]
Ashkinadze, BM [1 ]
Cohen, E [1 ]
Ron, A [1 ]
机构：
[1] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 02期
关键词：
electron-phonon interaction; luminescence;
D O I：
10.1016/S0038-1098(97)10250-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The LO-phonon sidebands of the photoluminescence in pure bulk GaAs are investigated as a function of excitation energy, intensity and also of the lattice and (hot) electron temperatures. The analysis shows that the exciton distribution at photoexcitation below the band gap can be characterized by a temperature which is very dose to the bath temperature down to 2 K. In the case of above-bandgap excitation or under microwave irradiation, the exciton temperature is higher than that of the lattice as a result of exciton-electron scattering. (C) 1998 Elsevier Science Ltd.
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页码：73 / 76
页数：4
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