Phonon-induced quantum diffusion in semiconductors

被引：0
|
作者：
Rosati, R. [1 ]
Rossi, F. [1 ]
机构：
[1] Politecn Torino, Dept Appl Sci & Technol, I-10129 Turin, Italy
来源：
2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE) | 2014年
关键词：
D O I：
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中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Starting from a density-matrix treatment of carrier-phonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phonon-induced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.
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页数：4
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