Improved properties of light emitting diode by rough p-GaN grown at lower temperature

被引：6

作者：

Xing Yan-Hui ^{[1
]}

Han Jun ^{[1
]}

Deng Jun ^{[1
]}

Li Jian-Jun ^{[1
]}

Xu Chen ^{[1
]}

Shen Guang-Di ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

来源：

ACTA PHYSICA SINICA | 2010年 / 59卷 / 02期

关键词：

GaN; metal-organic chemical vapor deposition; atomic force microscopy; double crystal X-ray diffraction; SURFACE; OUTPUT;

D O I：

10.7498/aps.59.1233

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaN: Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN: Mg materials were studied. When the molar ratio of CP2Mg and TMGa is between 1.4 x 10(-3) and 2.5 x 10(-3), the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly. When the molar ratio is 2.5 x 10(-3) the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser. Taking the p-GaN layer with molar ratio of CP2Mg and TMGa of 2.5 x 10(-3) as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.

引用

页码：1233 / 1236

页数：4

共 13 条

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