Construction of a silicon-based solid state quantum computer

被引:0
|
作者
Dzurak, AS [1 ]
Clark, RG [1 ]
Hamilton, AR [1 ]
Jamieson, DN [1 ]
Milburn, GJ [1 ]
Neilsen, M [1 ]
Prawer, S [1 ]
Rubinsztein-Dunlop, H [1 ]
Simmons, MY [1 ]
机构
[1] Univ New S Wales, Ctr Quantum Comp Technol, Sydney, NSW 2052, Australia
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We discuss progress towards the fabrication and demonstration of a prototype silicon-based quantum computer, being undertaken at the Centre for Quantum Computer Technology. The devices are based on a precise array of P-31 dopants embedded in Si-28. Fabrication is being pursued via two complementary pathways - a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays. The 'top-down' approach employs ion implantation through a multi-layer resist structure which serves to accurately register the donors to metal control gates and single-electron transistor (SET) read-out devices. In contrast the 'bottom-up' approach uses STM lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. Techniques for qubit read-out, which utilise coincidence measurements on novel twin-SET devices, are also presented.
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页码:141 / 148
页数:8
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