Exchange in silicon-based quantum computer architecture

被引:251
|
作者
Koiller, B [1 ]
Hu, XD
Das Sarma, S
机构
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[2] Univ Fed Rio de Janeiro, Inst Fis, BR-21945 Rio De Janeiro, Brazil
关键词
D O I
10.1103/PhysRevLett.88.027903
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The silicon-based quantum computer proposal has been one of the actively pursued ideas during the past three years. Here we calculate the donor electron exchange in silicon and germanium, and demonstrate an atomic-scale challenge for quantum computing in Si (and Ge), as the six (four) conduction-band minima in Si (Ge) lead to intervalley electronic interference, generating strong oscillations in the exchange splitting of two-donor two-electron states. Donor positioning with atomic-scale precision within the unit cell thus becomes a decisive factor in determining the strength of the exchange coupling - a fundamental ingredient for two-qubit operations in a silicon-based quantum computer.
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页数:4
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