New top coat design controls orientation of sub-10 nm block copolymer domains

被引：0
|
作者：
Maher, Michael J. [1 ]
Bates, Christopher M. [2 ]
Blachut, Gregory [1 ]
Cushen, Julia D. [1 ]
Carlson, Matthew C. [1 ]
Self, Jeffrey L. [1 ]
Durand, William J. [1 ]
Dean, Leon M. [1 ]
Ellison, Christopher J. [1 ]
Willson, C. Grant [1 ,2 ]
机构：
[1] Univ Texas Austin, McKetta Dept Chem Engn, Austin, TX 78712 USA
[2] Univ Texas Austin, Dept Chem, Austin, TX 78712 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2014年 / 247卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
281-POLY
引用
收藏
页数：1
相关论文
共 50 条
  • [1] A Top Coat with Solvent Annealing Enables Perpendicular Orientation of Sub-10 nm Microdomains in Si-Containing Block Copolymer Thin Films
    Kim, Eunjin
    Kim, Wonjung
    Lee, Kwang Hee
    Ross, Caroline A.
    Son, Jeong Gon
    ADVANCED FUNCTIONAL MATERIALS, 2014, 24 (44) : 6981 - 6988
  • [2] Polarity-Switching Top Coats Enable Orientation of Sub-10-nm Block Copolymer Domains
    Bates, Christopher M.
    Seshimo, Takehiro
    Maher, Michael J.
    Durand, William J.
    Cushen, Julia D.
    Dean, Leon M.
    Blachut, Gregory
    Ellison, Christopher J.
    Willson, C. Grant
    SCIENCE, 2012, 338 (6108) : 775 - 779
  • [3] Using block copolymer architecture to achieve sub-10 nm periods
    Sun, Zhiwei
    Zhang, Wenxu
    Hong, Song
    Chen, Zhenbin
    Liu, Xiaohui
    Xiao, Shuaigang
    Coughlin, E. Bryan
    Russell, Thomas P.
    POLYMER, 2017, 121 : 297 - 303
  • [4] Patterning sub-10 nm line patterns from a block copolymer hybrid
    Park, Sang-Min
    Park, Oun-Ho
    Cheng, Joy Y.
    Rettner, Charles T.
    Kim, Ho-Cheol
    NANOTECHNOLOGY, 2008, 19 (45)
  • [5] Sub-10 nm silicon FinFET devices on SOI substrate made by block copolymer lithography
    Li, Dong-Xue
    Chien, Chien-Liang
    Wei, Xinnian
    Huang, Yanwei
    Qu, Xin-Ping
    Chang, Tzu-Hsuan
    Xiong, Shisheng
    2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 21 - 23
  • [6] Computational Sub-10 nm Plasmonic Nanogap Patterns by Block Copolymer Self-Assembly
    Kim, Sang-Kon
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 16 (07) : 1063 - 1066
  • [7] Designing block copolymer architectures toward sub-10 nm features in robust thin films
    Hayat, Jeffery
    Nese, Alper
    Hardy, Christopher
    Tang, Chuanbing
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 249
  • [8] A Pathway Toward Sub-10 nm Surface Nanostructures Utilizing Block Copolymer Crystallization Control
    Meinhardt, Alexander
    Qi, Peng
    David, Christian
    Maximov, Ivan
    Keller, Thomas F.
    ADVANCED MATERIALS INTERFACES, 2025, 12 (06):
  • [9] Design with Sub-10 nm FinFET Technologies
    Clark, Lawrence T.
    Vashishtha, Vinay
    2017 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2017,
  • [10] Fabrication of sub-10 nm pattern using diblock copolymer
    Kihara, Naoko
    Takizawa, Kazutaka
    Hieda, Hiroyuki
    ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES, 2009, 7271
12345