A Study of GaN HEMTs Current Collapse Impacts on Doherty Multistage PA Linearity

被引：0
|
作者：
Murao, Yoji [1 ]
Hayakawa, Makoto [1 ]
Ohgami, Kazuya [1 ]
Kaneko, Tomoya [1 ]
机构：
[1] NEC Corp Ltd, Kawasaki, Kanagawa 2118666, Japan
来源：
2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2015年
关键词：
GaN HEMT; current collapse; multistage; Doherty amplifier; linearity;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of current collapse with regard to operating class of GaN HEMTs is studied. It is shown that AM-AM deviation due to current collapse is maximized in class AB, while it is reduced under both class A and class C region. A Doherty multi-stage amplifier is designed considering these effects to achieve both high efficiency and linearity. A 2W-class 1.8GHz multistage GaN Doherty PA shows PA chain efficiency of 38% with the power gain of 50.5dB. ACLR of -51dBc is obtained for 20MHz LTE carrier using a commercially available RF predistorter IC.
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页数：4
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