DEPENDENCE OF SILICON PIN DIODE ELECTRICAL CHARACTERISTICS ON PROTON FLUENCE

被引：2
|
作者：
Ceponis, T. [1 ]
Balcytis, A. [1 ]
Dzimidavicius, A. [1 ]
Gaubas, E. [1 ]
Kusakovskij, J. [1 ]
Zilinskas, K. [1 ]
机构：
[1] Vilnius State Univ, Inst Appl Res, LT-10223 Vilnius, Lithuania
来源：
LITHUANIAN JOURNAL OF PHYSICS | 2010年 / 50卷 / 02期
关键词：
radiation defects; Si PIN diodes; capacitance-voltage; current-voltage characteristics;
D O I：
10.3952/lithjphys.50205
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A comparative analysis of capacitance voltage (C-V) and current-voltage (I-V) characteristics dependent on proton irradiation fluence in the range from 7.10(12) to 7.10(14) p/cm(2) has been performed in float zone (FZ) silicon PIN diodes. A delta-shape and triangle profiles of radiation induced defects were formed by irradiation with protons having energy in the range from 2.0 to 2.7 MeV. Temperature-dependent variations of current (I-T) at fixed reverse voltage V(R) enable one to extract the thermal activation parameters. These values are found to be in a quantitative agreement with trap activation parameters measured by DLTS technique. The role of point and extended defects in correlated modifications of C-V and I-V characteristics of the irradiated diodes is discussed.
引用
收藏
页码：215 / 223
页数：9
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