DEPENDENCE OF SILICON PIN DIODE ELECTRICAL CHARACTERISTICS ON PROTON FLUENCE

A comparative analysis of capacitance voltage (C-V) and current-voltage (I-V) characteristics dependent on proton irradiation fluence in the range from 7.10(12) to 7.10(14) p/cm(2) has been performed in float zone (FZ) silicon PIN diodes. A delta-shape and triangle profiles of radiation induced defects were formed by irradiation with protons having energy in the range from 2.0 to 2.7 MeV. Temperature-dependent variations of current (I-T) at fixed reverse voltage V(R) enable one to extract the thermal activation parameters. These values are found to be in a quantitative agreement with trap activation parameters measured by DLTS technique. The role of point and extended defects in correlated modifications of C-V and I-V characteristics of the irradiated diodes is discussed.