A 4-stage Low-Noise Amplifier with 1.52-1.67dB Noise Figure

被引：0
|
作者：
Mao, Feng-yuan [1 ]
Li, Bin [1 ]
Chen, Zhi-Jian [1 ]
Wu, Zhao-hui [1 ]
Lin, Xiao-Ling [2 ]
机构：
[1] South China Univ Technol, Sch Microelect, Guangzhou 510640, Guangdong, Peoples R China
[2] Sci & Technol Reliabil Phys & Applicat Technol El, Guangzhou 510610, Peoples R China
来源：
2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT) | 2022年
关键词：
low-noise amplifier; Gallium Nitride; noise figure; low-Q matching network;
D O I：
10.1109/ICMMT55580.2022.10023404
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a 23-27GHz MMIC low-noise amplifier (LNA) using 0.15 mu m Gallium Nitride (GaN) process is proposed. By introducing a 5-element low-Q network between stages, the proposed 4-stage LNA achieves a good balance among bandwidth, noise figure (NF), gain and input return loss. The LNA exhibits a peak gain of 25.2dB and a minimum NF of 1.52dB with a 3-dB bandwidth from 23 to 27GHz. The input return loss and output return loss are better than 10 dB and 15 dB respectively. The LNA MMIC can be powered-up using a +5V DC power supply and it consumes total DC current of 30 mA. The overall chip size is 2.7 x1.8 mm(2).
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页数：3
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