Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350 degrees C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of similar to 250 mu Omega. cm was achieved at substrate temperatures 300-350 degrees C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.