Effect of Metal and Metal Oxide Dielectric Thickness on Physical Properties of Conductive Transparent MoO3/In/Cu/In/MoO3 Thin Film

被引：0

作者：

Kadivar, Erfan ^{[1
]}

Abdollahi, Masoud ^{[1
]}

机构：

[1] Shiraz Univ Technol, Dept Phys, Shiraz 71555313, Iran

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2021年 / 50卷 / 09期

关键词：

MoO3/In/Cu/In/MoO3 thin film; oxide/metal/oxide structure; optical transmittance; electrical conductivity; INDIUM-TIN-OXIDE; MULTILAYER;

D O I：

10.1007/s11664-021-09050-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MoO3/In/Cu/In/MoO3 thin film has been deposited on glass substrate by a thermal evaporation method. To identify the optimal structure with the highest figure of merit, we investigated the effect of the MoO3, Cu, and In thicknesses on the physical and electrooptical properties of the thin film. The experimental results indicated that, when decreasing the thickness of the MoO3 top layer, the sheet resistance of the thin film decreased. In addition, we found that the surface roughness strongly depended on the copper thickness. The best maximum figure of merit achieved was 3.89 x 10(-3) Omega(-1) for an indium thickness of 4 nm, copper thickness of 8 nm, and MoO3 bottom and top layer thicknesses of 20 nm and 35 nm, respectively.

引用

页码：5306 / 5311

页数：6

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