Advances in the modification and device integration of multiferroic bismuth ferrite

被引:1
|
作者
Li, Bin [1 ,2 ]
Wang, Chunqing [2 ,3 ]
机构
[1] Shanghai Univ Engn Sci, Sch Mat Engn, Shanghai, Peoples R China
[2] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin, Peoples R China
[3] Harbin Inst Technol, Key Lab Microsyst & Microstruct Mfg, Minist Educ, Harbin, Peoples R China
基金
中国国家自然科学基金;
关键词
Bismuth ferrite; leakage characteristics; magnetic properties; buffer layers; device integration;
D O I
10.1080/00150193.2021.1890466
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As a single-phase multiferroic oxide, BiFeO3 (BFO) is suitable for applications such as magnetoelectric memories, sensors and actuators. However, BFO suffers from high leakage current density and small magnetization. And the BFO in film form is apt to react with Pt bottom electrode during the thermal treatment. In addition, its required high processing temperatures can not be compatible well with the interconnect technologies for semiconductor. In this review, we summarize both the improvement in leakage characteristics and enhancement of magnetic properties of BFO. The effects of buffer layers on properties and device integration of BFO thin films are also introduced.
引用
收藏
页码:87 / 102
页数:16
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