A Review of the Crosstalk Suppression Methods for SiC MOSFETs in the Phase-leg Circuit Configuration

SiC (silicon carbide) device as one of the wide-bandgap power semiconductor devices have a wide range of applications in the fields of high frequency, high voltage and high temperature. However, due to lower gate threshold voltage and higher allowable negative gate threshold voltage, SiC MOSFETs in the phase-leg circuit configuration are more sensitive to the voltage spikes caused by crosstalk during the fast-switching process. To effectively suppress crosstalk and exploit the excellent performance of SiC MOSFETs, this paper analyzes the mechanism of crosstalk for SiC MOSFETs. The state-of-the-art modeling methods of crosstalk for SiC MOSFETs are sununarized based on gate resistance, common source inductance, MiUer capacitor, body diode reverse recovery, et al. The state-of-the-art suppression methods are classified and evaluated from complexity, feasibility and validity. Finally, an effective passive suppression scheme is proposed for SiC MOSFETs with Kelvin package.