Influence of annealing process on surface micromorphology of carbon-nickel composite thin films

被引:12
|
作者
Talu, Stefan [1 ]
Bramowicz, Miroslaw [2 ]
Kulesza, Slawomir [3 ]
Dalouji, Vali [4 ]
Ilkhani, Mansoure [5 ]
Ghaderi, Atefeh [6 ]
Solaymani, Shahram [7 ]
机构
[1] Tech Univ Cluj Napoca, Fac Mech Engn, Dept AET, Discipline Descript Geometry & Engn Graph, 103-105 B Dul Muncii St, Cluj Napoca 400641, Romania
[2] Univ Warmia & Mazury, Fac Tech Sci, Oczapowskiego 11, PL-10719 Olsztyn, Poland
[3] Univ Warmia & Mazury, Fac Math & Comp Sci, Sloneczna 54, PL-10710 Olsztyn, Poland
[4] Malayer Univ, Fac Sci, Dept Phys, Malayer, Iran
[5] Islamic Azad Univ, Dept Phys, Shahr E Qods Branch, Tehran, Iran
[6] Islamic Azad Univ, West Tehran Branch, Dept Phys, Tehran, Iran
[7] Islamic Azad Univ, Sci & Res Branch, Dept Phys, Tehran, Iran
关键词
Carbon-nickel composite thin films; Fractal analysis; RF magnetron co-sputtering; Three-dimensional surface micromorphology; A-CH FILMS; ELECTRICAL-PROPERTIES; MULTIFRACTAL ANALYSIS; OPTICAL-PROPERTIES; FRACTAL GEOMETRY; NI NANOPARTICLES; MICROSTRUCTURE; CU; MORPHOLOGY; FEATURES;
D O I
10.1007/s11082-017-1040-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this research, we investigated carbon-nickel composite films prepared by RF-magnetron co-sputtering on quartz substrates using a multi-component target (10 cm in diameter) consisting of pure graphite (99.99%) and strips of pure nickel (approx. 2 cm(2) in size) attached to the graphite race track, that corresponds to around 2.5% in area. The substrates were ultrasonically cleaned in acetone bath for 20 min and dried in hot air flow prior to deposition process. The films were grown at room temperature in a deposition chamber evacuated to a base pressure 1 x 10(-3) N/m(2) and then the constant Argon working pressure of 4 N/m(2) was settled and maintained by throttle valve. Deposition was done in constant RF power regime 400 W. The films were deposited for 600 s and then annealed for 2 h in a furnace at the temperature: 300, 500, 800 and 1000 degrees C under ambient atmospheric pressure.
引用
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页数:9
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