Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach

被引：0
|
作者：
Ayubi-Moak, J. S. [1 ]
Akis, R. [2 ]
Saraniti, M. [2 ]
Ferry, D. K. [2 ]
Goodnick, S. M. [2 ]
机构：
[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
[2] Univ Arizona, Ira A Fulton Sch Engn, Dept Elect Engn, Tucson, AZ 85721 USA
来源：
IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS | 2009年
关键词：
Global Modeling; Full-Band/Full-Wave; Cellular Monte Carlo simulator; ADI-FDTD solver; CARLO; HEMTS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results.
引用
收藏
页码：261 / +
页数：2
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