Spin split-off transition based IR detectors operating at high temperatures

被引：2
|
作者：
Jayaweera, P. V. V.
Matsik, S. G.
Tennakone, K.
Perera, A. G. U. [1 ]
Liu, H. C.
Krishna, S.
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87101 USA
来源：
INFRARED PHYSICS & TECHNOLOGY | 2007年 / 50卷 / 2-3期
基金：
美国国家科学基金会;
关键词：
split-off; IR detector;
D O I：
10.1016/j.infrared.2006.10.007
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
GaAs/AlGaAs based Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors were used to demonstrate experimental split-off response that is based on hole transitions between light/heavy hole bands and the split-off band (spin-orbit). Preliminary results indicate that, this detection mechanism is more efficient than free carrier mechanism for NIR operation. An unoptimized, GaAs/AlGaAs detector with a free carrier threshold wavelength of similar to 20 mu m showed a maximum operating temperature of 130 K for split-off response in the range 1.5-5 mu m with a peak D* of 1.0 x 10(8) Jones. By adjusting the free carrier threshold to match the split-off threshold, it should be feasible to further increase the operating temperature. Analysis indicates that practical devices with properly optimized parameters are capable of achieving room temperature operation with higher specific detectivity. The possible ways to tailor the threshold. for the split-off response to different wavelength rangers using different materials such as phosphides and nitrites are also discussed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：279 / 283
页数：5
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