Melting of a semiconductor crystal (InSb) with a short laser pulse (100 fs)

被引：0

作者：

Heimann, PA ^{[1
]}

Larsson, J ^{[1
]}

Lindenberg, A ^{[1
]}

Schuck, PJ ^{[1
]}

Judd, E ^{[1
]}

Bucksbaum, PH ^{[1
]}

Lee, RW ^{[1
]}

Padmore, HA ^{[1
]}

Wark, JS ^{[1
]}

Falcone, RW ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Accelerator & Fus Res, Adv Light Source, Berkeley, CA 94720 USA

来源：

HIGH HEAT FLUX AND SYNCHROTRON RADIATION BEAMLINES | 1997年 / 3151卷

关键词：

x-ray diffraction; pulsed laser; time-resolved;

D O I：

暂无

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Time-dependent x-ray diffraction has been measured from laser-irradiated semiconductor crystals. Laser pulses with 100 fs duration and 800 nm wavelength excite the sample inducing phase transitions. 5 keV x-rays from the Advanced Light Source are diffracted by a sagittally-focusing Si (111) crystal and then by the sample crystal, InSb (111), onto an avalanche photodiode. By detecting individual pulses of synchrotron radiation, which have a duration of 70 ps, the diffracted intensity is observed to decrease because of photoabsorption in a disordered surfaced layer. Rocking curves measured after the laser irradiation show a tail, which results from a strained region caused by expansion of the crystal lattice.

引用

页码：102 / 106

页数：5

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