X-ray diffraction measurement of liquid As2Se3 by using third-generation synchrotron radiation

被引:6
|
作者
Kajihara, Y. [1 ]
Inui, M.
Matsuda, K.
Tamura, K.
Hosokawa, S.
机构
[1] Hiroshima Univ, Grad Sch Integrated Arts & Sci, Higashihiroshima 7398521, Japan
[2] Kyoto Univ, Grad Sch Engn, Kyoto 6068501, Japan
[3] Hiroshima Inst Technol, Ctr Mat Res Using Third Generat Synchrotron R, Hiroshima 7315193, Japan
关键词
X-ray diffraction; glass melting; short-range order;
D O I
10.1016/j.jnoncrysol.2007.01.062
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
X-ray diffraction (XD) measurements of liquid As2Se3 were carried out in the temperature range up to 1600 degrees C where the temperature is well beyond the semiconductor to metal (SC-M) transition temperature around 1000 degrees C. The measurements were done by using third-generation synchrotron radiation at SPring-8 and the obtained structure factors have been much improved compared to previous in house XD measurements with regard to the momentum transfer range and the data statistics. The deduced pair distribution functions show that with increasing temperature, the position of the first peak does not change within the errorbar and the coordination number gradually decreases up to 1600 degrees C irrespective of the SC-M transition. These results coincide with those of the first-principle molecular dynamics simulation. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1985 / 1989
页数:5
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