A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless LAN in 0.18-μm CMOS

被引：162

作者：

Cassan, DJ

Long, JR

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, RF MMIC Grp, Toronto, ON M5S 1A1, Canada

[2] Delft Univ Technol, Fac ITS, Elect Res Lab, NL-2628 CD Delft, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 03期

关键词：

feedback amplifier; low-noise amplifier (LNA); low-voltage design; monolithic transformer/inductor; neutralization; RF CMOS; wireless LAN;

D O I：

10.1109/JSSC.2002.808284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-noise amplifier (LNA) uses low-loss monolithic transformer feedback to neutralize-the gate-drain overlap capacitance of a field-effect transistor (FET). A differential implementation in 0.18-mum CMOS technology, designed for 5-GHz wireless local-area networks (LANs), achieves a measured power gain of 14.2 dB, noise figure (NF, 50 Omega) of 0.9 dB, and third-order input intercept point (IIP3) of +0.9 dBm at 5:75 GHz, while consuming 16 mW from a 1-V supply. The feedback design is benchmarked to a 5.75-GHz cascode LNA fabricated in the same technology that realizes 14.1-dB gain, 1.8-dB NF, and IIP3 of +4.2 dBm, while dissipating 21.6 mW at 1.8 V.

引用

页码：427 / 435

页数：9

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