Temperature dependence of quantum dot lasers

被引：1
|
作者：
Deppe, DG [1 ]
Park, G [1 ]
Shchekin, OB [1 ]
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
来源：
OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷
关键词：
D O I：
10.1117/12.392129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum dots (QDs) generate zero-dimensional quantum states that form the active material of semiconductor lasers and light emitters. Because of their discrete energy levels, the QDs offer numerous advantages to fabricate improved lasers and low power light sources. However, their low optical gain and complex material structure also create design challenges. Below we discuss important device principles that are emerging for use of QDs in both semiconductor lasers that influence the temperature dependence of their lasing threshold. in particular, we describe the temperature dependence due to the quantum confinement.
引用
收藏
页码：90 / 99
页数：10
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