Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers

被引：0
|
作者：
Smowton, P. M. [1 ]
Elliott, S. N. [1 ]
Shutts, S. [1 ]
Michell, G. [1 ]
Al-Ghamdi, M. S. [2 ]
Krysa, A. B. [3 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, Queens Bldg, Cardiff CF24 3AA, S Glam, Wales
[2] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah, Saudi Arabia
[3] Univ Sheffield, Natl Ctr Technol 3 4, EPSRC, Sheffield S1 3JD, S Yorkshire, England
来源：
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We quantitatively determine the factors that decide the threshold current temperature dependence at high temperatures in state-of-the-art InP quantum dot lasers and demonstrate a design with low threshold and reduced temperature sensitivity (C)2010 Optical Society of America
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页数：2
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