InP/AlGaInP on GaAs Quantum Dot Lasers

被引：0
|
作者：
Smowton, P. M. [1 ]
Al-Ghamdi, M. [1 ]
Krysa, A. B. [2 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, Queens Bldg, Cardiff CF24 3AA, S Glam, Wales
[2] Univ Sheffield, EPSRC Natl Ctr III V Technol, Sheffield S1 3JD, S Yorkshire, England
来源：
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MOVPE grown InP q-dot lasers have low 300K threshold current density (195 Acm(-2) for 2000 mu m long device) and T-0=105K (10-85 degrees C) for 725-740nm emission. Homogenous broadening appears to be more pronounced than in InGaAs q-dots. (C)2006 Optical Society of America
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页码：43 / +
页数：2
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