Electron transport in a two-dimensional electron gas with magnetic barriers

被引:139
|
作者
Vancura, T [1 ]
Ihn, T
Broderick, S
Ensslin, K
Wegscheider, W
Bichler, M
机构
[1] ETH Zurich, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[3] Univ Regensburg, Inst Angew & Expt Phys, D-93040 Regensburg, Germany
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 08期
关键词
D O I
10.1103/PhysRevB.62.5074
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low-temperature longitudinal and Hall resistances of a two-dimensional electron gas are studied in the presence of a magnetic barrier created under the edge of a thin ferromagnetic film. An in-plane external magnetic field allows us to tune the barrier height within the classically transmissive regime. A theoretical model is presented that predicts the size and shape of the resistance correction for the ballistic case in the presence of a single magnetic barrier. The model that contains no adjustable parameters is in qualitative agreement with the experiment. The size of the predicted resistance correction agrees with the measurement within a factor of 2.
引用
收藏
页码:5074 / 5078
页数:5
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