Prolonged operation of an OLED degrades the luminance and alters the voltage-dependent capacitance. The loss of luminance in simple blue and green fluorescent OLEDs is linearly correlated with internal charge accumulation at the HTL/LEL interface. The shapes of the EL decay curve and the transition-voltage-rise curve are independent of temperature. Proper scaling of the time axis makes plots of EL or transition voltage vs. time at different temperatures to coincide. The resulting universal decay curves are not altered by the introduction of the fluorescent dopant, suggesting that the degradation processes are the same in the doped and undoped devices. Red fluorescent OLEDs of more complicated structure degrade in a dopant-dependent manner.
机构:
Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Zhou, Yubu
Gao, Huayu
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Gao, Huayu
Wang, Jing
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机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Hong Kong 999077, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Wang, Jing
Yeung, Fion Sze Yan
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Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Hong Kong 999077, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Yeung, Fion Sze Yan
Lin, Shenghuang
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Songshan Lake Mat Lab, Dongguan 523808, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Lin, Shenghuang
Li, Xianbo
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Li, Xianbo
Liao, Shaolin
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USASun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Liao, Shaolin
Luo, Dongxiang
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Guangzhou Univ, Huangpu Hydrogen Innovat Ctr, Sch Chem & Chem Engn, Guangzhou Key Lab Clean Energy & Mat, Guangzhou 510006, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Luo, Dongxiang
Kwok, Hoi Sing
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Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Hong Kong 999077, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
Kwok, Hoi Sing
Liu, Baiquan
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Sun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R ChinaSun Yat sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
机构:
Consiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 BolognaConsiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 Bologna
Capelli R.
Toffanin S.
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Consiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 BolognaConsiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 Bologna
Toffanin S.
Generali G.
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Consiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 BolognaConsiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 Bologna
Generali G.
Usta H.
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Polyera Corporation, Skokie, IL 60077Consiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 Bologna
Usta H.
Facchetti A.
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Polyera Corporation, Skokie, IL 60077Consiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 Bologna
Facchetti A.
Muccini M.
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Consiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 Bologna
E.T.C. Srl, I-40129 BolognaConsiglio Nazionale Delle Ricerche (CNR), Istituto per Lo Studio Dei Materiali Nanostrutturati (ISMN), I-40129 Bologna