Hydrogen Transportation Behaviour of V-Ni Solid Solution: A First-Principles Investigation
被引:6
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作者:
Qin, Jiayao
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Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
South China Univ Technol, Sch Mat Sci & Engn, Key Lab Adv Energy Storage Mat Guangdong Prov, Guangzhou 510640, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Qin, Jiayao
[1
,2
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Liu, Zhigao
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Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Liu, Zhigao
[1
]
Zhao, Wei
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South China Univ Technol, Sch Mat Sci & Engn, Key Lab Adv Energy Storage Mat Guangdong Prov, Guangzhou 510640, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Zhao, Wei
[2
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Wang, Dianhui
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Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Wang, Dianhui
[1
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Zhang, Yanli
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Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Zhang, Yanli
[1
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Zhong, Yan
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Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Zhong, Yan
[1
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Zhang, Xiaohui
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机构:
Hezhou Univ, Coll Mat & Chem Engn, Hezhou 542899, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Zhang, Xiaohui
[3
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Wang, Zhongmin
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Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Hezhou Univ, Coll Mat & Chem Engn, Hezhou 542899, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Wang, Zhongmin
[1
,3
]
Hu, Chaohao
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Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Hu, Chaohao
[1
]
Liu, Jiangwen
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South China Univ Technol, Sch Mat Sci & Engn, Key Lab Adv Energy Storage Mat Guangdong Prov, Guangzhou 510640, Peoples R ChinaGuilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
Liu, Jiangwen
[2
]
机构:
[1] Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
[2] South China Univ Technol, Sch Mat Sci & Engn, Key Lab Adv Energy Storage Mat Guangdong Prov, Guangzhou 510640, Peoples R China
[3] Hezhou Univ, Coll Mat & Chem Engn, Hezhou 542899, Peoples R China
Hydrogen embrittlement causes deterioration of materials used in metal-hydrogen systems. Alloying is a good option for overcoming this issue. In the present work, first-principles calculations were performed to systematically study the effects of adding Ni on the stability, dissolution, trapping, and diffusion behaviour of interstitial/vacancy H atoms of pure V. The results of lattice dynamics and solution energy analyses showed that the V-Ni solid solutions are dynamically and thermodynamically stable, and adding Ni to pure V can reduce the structural stability of various VHx phases and enhance their resistance to H embrittlement. H atoms preferentially occupy the characteristic tetrahedral interstitial site (TIS) and the octahedral interstitial site (OIS), which are composed by different metal atoms, and rapidly diffuse along both the energetically favourable TIS -> TIS and OIS -> OIS paths. The trapping energy of monovacancy H atoms revealed that Ni addition could help minimise the H trapping ability of the vacancies and suppress the retention of H in V. Monovacancy defects block the diffusion of H atoms more than the interstitials, as determined from the calculated H-diffusion barrier energy data, whereas Ni doping contributes negligibly toward improving the H-diffusion coefficient.
机构:
State Key Laboratory of Solidification Processing,Northwestern Polytechnical UniversityState Key Laboratory of Solidification Processing,Northwestern Polytechnical University
Yanli Lu
Yi Wang
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机构:
State Key Laboratory of Solidification Processing,Northwestern Polytechnical UniversityState Key Laboratory of Solidification Processing,Northwestern Polytechnical University
Yi Wang
Yifan Wang
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机构:
State Key Laboratory of Solidification Processing,Northwestern Polytechnical UniversityState Key Laboratory of Solidification Processing,Northwestern Polytechnical University
Yifan Wang
Meng Gao
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机构:
State Key Laboratory of Solidification Processing,Northwestern Polytechnical UniversityState Key Laboratory of Solidification Processing,Northwestern Polytechnical University
Meng Gao
Yao Chen
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机构:
State Key Laboratory of Solidification Processing,Northwestern Polytechnical UniversityState Key Laboratory of Solidification Processing,Northwestern Polytechnical University
Yao Chen
Zheng Chen
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机构:
State Key Laboratory of Solidification Processing,Northwestern Polytechnical UniversityState Key Laboratory of Solidification Processing,Northwestern Polytechnical University