Solid-State Conversion of Single Crystals: The Principle and the State-of-the-Art

被引:111
|
作者
Kang, Suk-Joong L. [1 ]
Park, Ji-Hoon [1 ]
Ko, Seok-Young [1 ]
Lee, Ho-Yong [2 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Sun Moon Univ, Dept Mat Sci & Engn, Asan 336708, South Korea
基金
新加坡国家研究基金会;
关键词
ABNORMAL GRAIN-GROWTH; MOL-PERCENT PBTIO3; FREE PIEZOELECTRIC CERAMICS; OXYGEN PARTIAL-PRESSURE; FACETED WC GRAINS; BARIUM-TITANATE; ELECTRICAL-PROPERTIES; COARSENING BEHAVIOR; BOUNDARY STRUCTURE; ELECTROMECHANICAL PROPERTIES;
D O I
10.1111/jace.13420
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Solid-state conversion of single crystals from polycrystalline materials has the advantages of cost-effectiveness, chemical homogeneity, and versatility over the conventional melt growth and solution growth methods, particularly for systems with high melting points, incongruent melting, high reactivity (volatility), and phase transformations at high temperature. Nevertheless, for commercial production, this technique has only been successful in a few limited systems, in particular ferroelectric systems. This is mostly because of the difficulty in controlling the microstructure, particularly suppressing grain growth in the polycrystal during its conversion. This article describes the principle and the current status of the solid-state conversion of single crystals. We first introduce the recently developed principle of microstructural evolution to explain the basis of the microstructure control in polycrystals for solid-state conversion. We then report recent technical developments in fabricating single crystals by the solid-state single crystal growth (SSCG) method and their physical properties. The SSCG method is expected to be studied and utilized more widely in fabricating single crystals with complex compositions as a strong alternative to the melt growth and solution growth methods.
引用
收藏
页码:347 / 360
页数:14
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