Graphene-Based Semiconductor Heterostructures for Photodetectors

被引：69
|
作者：
Shin, Dong Hee
Choi, Suk-Ho [1 ]
机构：
[1] Kyung Hee Univ, Dept Appl Phys, Yongin 17104, South Korea
来源：
MICROMACHINES | 2018年 / 9卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
graphene; photodetector; transparent conductive electrode; hybrid heterostructure; LEAD IODIDE PEROVSKITE; SILICON QUANTUM DOTS; HIGH-PERFORMANCE; BROAD-BAND; SCHOTTKY-JUNCTION; 2-DIMENSIONAL MATERIALS; ULTRAHIGH RESPONSIVITY; ULTRASENSITIVE DETECTION; HYBRID PHOTODETECTOR; CARBON NANOTUBES;
D O I：
10.3390/mi9070350
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.
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页数：29
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