Design of grating based narrow band reflector on SOI waveguide

被引：8

作者：

Sharma, Tarun ^{[1
,2
]}

Rana, Vaibhav ^{[3
]}

Wang, Jiaqi ^{[1
]}

Cheng, Zhenzhou ^{[4
,5
,6
]}

Chen, Yuzhi ^{[1
]}

Geng, Youfu ^{[1
]}

Hong, Xueming ^{[1
]}

Li, Xuejin ^{[1
]}

Yu, Kyoungsik ^{[7
]}

Kaushik, Brajesh Kumar ^{[2
]}

机构：

[1] Shenzhen Univ, Shenzhen Key Lab Sensor Technol, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China

[2] Indian Inst Technol, Dept Elect & Commun Engn, Roorkee 247667, Uttar Pradesh, India

[3] Indian Inst Technol Delhi, Ctr Appl Res Elect CARE, Delhi 110016, India

[4] Tianjin Univ, Sch Precis Instruments & Optoelect Engn, Tianjin 300072, Peoples R China

[5] Minist Educ, Key Lab Optoelect Informat Technol, Tianjin 300072, Peoples R China

[6] Univ Tokyo, Dept Chem, Tokyo 1130033, Japan

[7] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

来源：

OPTIK | 2021年 / 227卷

基金：

中国国家自然科学基金;

关键词：

Silicon; Gratings; Waveguides; Filters; SILICON; FABRICATION;

D O I：

10.1016/j.ijleo.2020.165995

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A grating-based narrowband wavelength selective reflector on silicon on insulator waveguide is proposed here. The 500 nm thick silicon waveguide is used in the reflector design. The design consists of dual-etch layers for different grating sets separated by the center cavity. The dutycycle, grating-period, and side etching depth are optimized for achieving high reflection and narrow bandwidth. The proposed reflector shows a reflection of 96 % with a full-width halfmaximum bandwidth of 1.5 nm at 1550 nm wavelengths.

引用

页数：5

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