Characterisation of deep-level defects in semi-insulating GaAs and InP by high resolution photoinduced transient spectroscopy (HRPITS)

被引：0
|
作者：
Kaminski, P
Pawlowski, M
Cwirko, R
Palczewska, M
Kozlowski, R
机构：
来源：
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96) | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep levels in undoped semi-insulating (SI) GaAs and Fe-doped SI InP were investigated by Photoinduced Transient Spectroscopy (PITS). It is demonstrated that the resolution of this method can be improved by direct computer fitting of digitally recorded photocurrent decays.
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页码：141 / 144
页数：4
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