Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

被引：17
|
作者：
Yoon, Sung-Min [1 ,2 ]
Yang, Shin-Hyuk [2 ]
Jung, Soon-Won [2 ]
Byun, Chun-Won [2 ]
Park, Sang-Hee Ko [2 ]
Hwang, Chi-Sun [2 ]
Ishiwara, Hiroshi [1 ]
机构：
[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan
[2] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305700, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 05期
关键词：
carrier mobility; ferroelectric materials; insulating thin films; polymer blends; semiconductor materials; semiconductor thin films; thin film transistors; zinc compounds; FIELD-EFFECT TRANSISTOR; HIGH-PERFORMANCE; LARGE-AREA; CHANNEL;
D O I：
10.1149/1.3312900
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A solution-process-based nonvolatile memory thin-film transistor (MTFT) was demonstrated to realize simple and low cost memory devices for future large-area electronics. The semiconducting active channel of zinc indium oxide (ZIO) and a gate insulator of poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] were prepared by a spin-coating method using corresponding precursor solutions. The obtained ZIO film was amorphous and showed an excellent transmittance (similar to 90%) in the visible range. The MTFT showed a turn-on voltage shift originating from the ferroelectric nature of P(VDF-TrFE), a field-effect mobility of 3.3 cm(2) V(-1) s(-1), and a subthreshold swing of 0.86 V/dec with an on/off current ratio of 8.4x10(6).
引用
收藏
页码：H141 / H143
页数：3
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