Improved thin-film transistor (TFT) characteristics on chemical-mechanically polished polycrystalline silicon film

被引：1

作者：

Chan, ACK ^{[1
]}

Chan, MS ^{[1
]}

Ko, PK ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1999年

关键词：

D O I：

10.1109/HKEDM.1999.836403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A standard CMP (Chemical Mechanical Polishing) process has been used to reduce surface roughness of polysilicon thin film N-channel TFT ha; been fabricated on both polished and unpolished polysilicon thin film. Both thin thermally grown and deposited oxides with thickness under 30nm are used as the gate dielectric. It is founded that TFT fabricated on polished polysilicon thin film exhibits higher carrier mobility, better sub-threshold swing, lower threshold voltage, higher on/off current ratio as well as better ability to withstand high voltage operation and longer device lifetime. Such improvement should benefit applications which incorporate TFT such as SRAM and LCD display.

引用

页码：38 / 41

页数：4

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