Growth of MoS2 and metal back electrode-dependent performance of MoS2/Si heterojunction solar cells

被引:0
|
作者
Ai, Zikang [1 ,2 ]
Yuan, Jintao [1 ,2 ]
Huang, Ruiming [1 ,3 ]
Yu, Meng [1 ,3 ]
Cheng, Qijin [1 ,2 ]
机构
[1] Xiamen Univ, Shenzhen Res Inst, Shenzhen 518000, Peoples R China
[2] Xiamen Univ, Sch Elect Sci & Engn, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Coll Energy, Xiamen 361102, Peoples R China
关键词
Chemical vapor deposition; MoS2; heterojunction solar cells; numerical simulation; LAYER;
D O I
10.1142/S1793604722500217
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, MoS2 thin films were successfully synthesized by chemical vapor deposition (CVD) using MoO3 and sulfur powders as precursor sources. The effect of the MoO3 dosage and heating temperature on the quality of the synthesized MoS2 films are investigated and a detailed reaction mechanism is proposed to interpret the obtained experimental result. Furthermore, we have studied the influence of different metal back electrodes (including Ag and Au) on the photovoltaic performance of the fabricated MoS2/Si heterojunction solar cell. It is shown that, in comparison with the solar cell using Au as a metal back electrode, the solar cell using Ag as a metal back electrode has poor photovoltaic performance with the appearance of the S-type shape in the measured current density-voltage curve. Finally, numerical simulation based on AFORS-HET software has been carried out to investigate the photovoltaic performance of the n-MoS2/p-Si heterojunction solar cell under different work functions of the metal back electrode. The result of numerical simulation is consistent with our experiential result in the trend. This work is highly relevant to the development of transition metal dichalcogenides in the application of solar cells.
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页数:5
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