Molecular beam epitaxy growth of single-domain and high-quality ZnO layers on Nitrided (0001) sapphire surface

被引：35

作者：

Wang, XQ

Iwaki, H

Murakami, M

Du, XL

Ishitani, Y

Yoshikawa, A

机构：

[1] Chiba Univ, Ctr Frontier Elect & Photon, Inage Ku, Chiba 2638522, Japan

[2] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 2A期

关键词：

ZnO; rf-MBE; sapphire nitridation; wide-gap semiconductors; rotation domain;

D O I：

10.1143/JJAP.42.L99

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitridation of a (0001) sapphire substrate was used to eliminate the rotation domains and improve the quality of a ZnO film grown by rf-plasma-assisted molecular beam epitaxy. It was found that a very thin nitrogen polar AlN layer, which was formed by nitridation, acted as a template for the following growth of the ZnO film, resulting in the elimination of the rotation domains which were often observed in the case without nitridation. The full width at half maximum of (002) and (102) X-ray diffraction omega-scans decreased from 912 and 2870 arcsec to 95 and 445 arcsec, respectively, due to the effect of sapphire nitridation. Based on this, its optical quality was also improved.

引用

页码：L99 / L101

页数：3

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