Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (vol 108, 141604, 2016)

被引：1

作者：

Oh, Saeroonter ^{[1
]}

Baeck, Ju Heyuck ^{[2
]}

Bae, Jong Uk ^{[2
]}

Park, Kwon-Shik ^{[2
]}

Kang, In Byeong ^{[2
]}

机构：

[1] Hanyang Univ, Div Elect Engn, Ansan 15588, Gyeonggi Do, South Korea

[2] LG Display Co, Ctr Res & Dev, Paju 413811, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 16期

关键词：

D O I：

10.1063/1.4947573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：1

共 35 条

[21] Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
Ji, Kwang Hwan
Kim, Ji-In
Jung, Hong Yoon
Park, Se Yeob
Choi, Rino
Kim, Un Ki
Hwang, Cheol Seong
Lee, Daeseok
Hwang, Hyungsang
Jeong, Jae Kyeong
APPLIED PHYSICS LETTERS, 2011, 98 (10)
[22] Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
Kim, Eungtaek
Kim, Choong-Ki
Lee, Myung Keun
Bang, Tewook
Choi, Yang-Kyu
Park, Sang-Hee Ko
Choi, Kyung Cheol
APPLIED PHYSICS LETTERS, 2016, 108 (18)
[23] Effect of temperature and illumination on the instability of a-Si:H thin-film transistors under AC gate bias stress
Huang, CY
Teng, TH
Yang, CJ
Tseng, CH
Cheng, HC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (4A): : L316 - L318
[24] Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric
Chien, Yu-Chieh
Ramirez, Horacio Londono
Steudel, Soeren
Rolin, Cedric
Pendurthi, Ravi
Chang, Ting-Chang
Genoe, Jan
Nag, Manoj
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (04) : 565 - 568
[25] Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors
Yang, Tae Jun
Park, Jingyu
Choi, Sungju
Kim, Changwook
Han, Moonsup
Bae, Jong-Ho
Choi, Sung-Jin
Kim, Dong Myong
Shin, Hong Jae
Jeong, Yun Sik
Bae, Jong Uk
Oh, Chang Ho
Park, Dong-Wook
Kim, Dae Hwan
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (10) : 1685 - 1688
[26] Effect of SiO2 and/or SiNx Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
Kang, Dong Han
Kang, In
Ryu, Sang Hyun
Ahn, Young Sik
Jang, Jin
JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (09): : 699 - 703
[27] Effect of Positive Bias Stress on the Back-Gate voltage-Modulated Threshold voltage in Double-Gate Amorphous InGaZnO Thin-Film Transistors
Park, Jingyu
Park, Shinyoung
Jang, Jun Tae
Choi, Sung-Jin
Kim, Dong Myong
Bae, Jong-Ho
Shin, Hong Jae
Jeong, Yun Sik
Bae, Jong Uk
Oh, Chang Ho
Kim, Changwook
Kim, Dae Hwan
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (11) : 1878 - 1881
[28] Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors
Kang, Hara
Jang, Jun Tae
Kim, Jonghwa
Choi, Sung-Jin
Kim, Dong Myong
Kim, Dae Hwan
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15 (05) : 519 - 525
[29] Influence of the gate/drain voltage configuration on the current stress instability in amorphous indium-zinc-oxide thin-film transistors with self-aligned top-gate structure
Choi, Sungju
Park, Shinyoung
Kim, Jae-Young
Rhee, Jihyun
Kang, Hara
Kim, Dong Myong
Choi, Sung-Jin
Kim, Dae Hwan
IEEE Electron Device Letters, 2019, 40 (09): : 1431 - 1434
[30] Influence of the Gate/Drain Voltage Configuration on the Current Stress Instability in Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Self-Aligned Top-Gate Structure
Choi, Sungju
Park, Shinyoung
Kim, Jae-Young
Rhee, Jihyun
Kang, Hara
Kim, Dong Myong
Choi, Sung-Jin
Kim, Dae Hwan
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1431 - 1434

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