Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (vol 108, 141604, 2016)

被引：1
|
作者：
Oh, Saeroonter [1 ]
Baeck, Ju Heyuck [2 ]
Bae, Jong Uk [2 ]
Park, Kwon-Shik [2 ]
Kang, In Byeong [2 ]
机构：
[1] Hanyang Univ, Div Elect Engn, Ansan 15588, Gyeonggi Do, South Korea
[2] LG Display Co, Ctr Res & Dev, Paju 413811, Gyeonggi Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 16期
关键词：
D O I：
10.1063/1.4947573
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
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