Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

被引：10
|
作者：
Breev, I. D. [1 ]
Anisimov, A. N. [1 ]
Wolfson, A. A. [1 ]
Kazarova, O. P. [1 ]
Mokhov, E. N. [2 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
AlN; sublimation sandwich method; Raman scattering; BULK CRYSTALS; GAN;
D O I：
10.1134/S1063782619110034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.
引用
收藏
页码：1558 / 1561
页数：4
相关论文
共 50 条
  • [31] Sublimation Growth and Defect Characterization of AlN Single Crystals
    Wang, Shaoping
    Raghothamachar, Balaji
    Dudley, Michael
    Ren, Zaiyuan
    Han, Jung
    Timmerman, Andrew G.
    NITRIDES AND RELATED BULK MATERIALS, 2008, 1040
  • [32] New technique for sublimation growth of AlN single crystals
    Shi, Y
    Liu, B
    Liu, LH
    Edgar, JH
    Payzant, EA
    Hayes, JM
    Kuball, M
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2001, 6 (05):
  • [33] Sublimation growth of AlN bulk crystals in Ta crucibles
    Mokhov, EN
    Avdeev, OV
    Barash, IS
    Chemekova, TY
    Roenkov, AD
    Segal, AS
    Wolfson, AA
    Makarov, YN
    Ramm, MG
    Helava, H
    JOURNAL OF CRYSTAL GROWTH, 2005, 281 (01) : 93 - 100
  • [34] Seeded growth of AlN bulk single crystals by sublimation
    Schlesser, R
    Dalmau, R
    Sitar, Z
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (04) : 416 - 420
  • [35] Study on the seeded growth of AlN bulk crystals by sublimation
    Balakrishnan, K
    Iwaya, M
    Kamiyama, S
    Amano, H
    Akasaki, I
    Takagi, T
    Noro, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11A): : 7448 - 7453
  • [36] Growth of bulk AlN and GaN single crystals by sublimation
    Balkas, CM
    Sitar, Z
    Zheleva, T
    Bergman, L
    Shmagin, IK
    Muth, JF
    Kolbas, R
    Nemanich, R
    Davis, RF
    III-V NITRIDES, 1997, 449 : 41 - 46
  • [37] Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals
    Sumathi, R. Radhakrishnan
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (08):
  • [38] Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals
    R. Radhakrishnan Sumathi
    Applied Physics A, 2021, 127
  • [39] Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates
    Argunova, Tatiana S.
    Gutkin, Mikhail Yu.
    Je, Jung Ho
    Kalmykov, Alexander E.
    Kazarova, Olga P.
    Mokhov, Evgeniy N.
    Mikaelyan, Kristina N.
    Myasoedov, Alexander V.
    Sorokin, Lev M.
    Shcherbachev, Kirill D.
    CRYSTALS, 2017, 7 (06):
  • [40] Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals
    A. A. Wolfson
    E. N. Mokhov
    Semiconductors, 2010, 44 : 1383 - 1385
12345