Superlinear photoluminescence intensity observed in pump-probe experiments in GaAs/Ga1-xAlxAs heterojunctions

被引：0
|
作者：
Shen, JX
Pittini, R [1 ]
Oka, Y
机构：
[1] Tohoku Univ, RISM, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2000年 / 221卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200009)221:1<545::AID-PSSB545>3.0.CO;2-I
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We studied the superlinearity of the photoluminescence intensity and its temperature dependence in GaAs/Ga1-xAlxAs heterojunctions by means of pump-probe experiments. The photoluminescence intensity of the second laser pulse increases drastically when the heterojunction is pre-excited by a short laser pulse. We attribute this superlinearity to the vertical transport of the photoexcited carriers driven by the interface electric field, and the subsequent bimolecular exciton formation.
引用
收藏
页码：545 / 548
页数：4
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