Atomic hydrogen passivation of ion implantation damage at Si-SiO2 interfaces

被引：0

作者：

Kar, S ^{[1
]}

Ashok, S ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

ION BEAM MODIFICATION OF MATERIALS | 1996年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：841 / 844

页数：4

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