Atomic hydrogen passivation of ion implantation damage at Si-SiO2 interfaces

被引：0
|
作者：
Kar, S [1 ]
Ashok, S [1 ]
机构：
[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 208016,UTTAR PRADESH,INDIA
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：841 / 844
页数：4
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