Synthesis of Bi2S3 Quantum Dots for Sensitized Solar Cells by Reverse SILAR

被引：4
|
作者：
Singh, Navjot [1 ]
Sharma, J. [1 ]
Tripathi, S. K. [1 ,2 ]
机构：
[1] Panjab Univ, Ctr Nano Sci & Technol, Univ Inst Emerging Areas Sci & Technol, Chandigarh 160025, India
[2] Panjab Univ, Ctr Adv Study Phys, Dept Phys, Chandigarh 160014, India
来源：
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015) | 2016年 / 1728卷
关键词：
CDS;
D O I：
10.1063/1.4946474
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Quantum Dot Sensitized Solar cells (QDSSC) have great potential to replace silicon-based solar cells. Quantum dots of various materials and sizes could be used to convert most of the visible light into the electrical current. This paper put emphasis on the synthesis of Bismuth Sulphide quantum dots and selectivity of the anionic precursor by Successive Ionic Layer Adsorption Reaction (SILAR). Bismuth Sulfide (Bi2S3) (group V - V-i semiconductor) is strong contestant for cadmium free solar cells due to its optimum band gap for light harvesting. Optical, structural and electrical measurements are reported and discussed. Problem regarding the choice of precursor for anion extraction is discussed. Band gap of the synthesized quantum dots is 1.2 eV which does not match with the required energy band gap of bismuth sulfide that is 1.7eV.
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页数：3
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